The effect of IMC microstructure of solder joint on the mechanical drop performance in SnxAgCu and SnAgCuX CSP package

Y. Lai, P.C. Chen, Chang-Lin Yeh, J. Lee
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引用次数: 12

Abstract

With the RoHS deadline approaching by July 1, 2006, many manufacturers are aggressively eliminating the use of lead in consumer electronic products. However, the development of lead-free products requires close cooperation between end-product manufacturers and component manufacturers because metallurgies, resin materials, reflows conditions and moisture resistance will be influenced. The increase in reflow temperature is generally considered to be the most difficult issue associated to the conversion to SnAgCu solder interconnect. But right now the mechanical drop performance in SnAgCu solder joint has been becoming another attractive topic even being industry headache due to brittle characteristics of SnAgCu interconnect. In the study, one 14 times 14 lead free CSP BGA with 0.3 mm/0.5 mm ball diameter/pitch was adopted as test vehicle. The intermetallic compounds morphology evolution which can be generated when using SnxAgCu and SnAgCuX solder ball in combination with electrolytic NiAu-plated substrates was investigated during 150degC thermal aging, such as single layer SnNi IMC and complex layer SnNi/SnNiCu IMC in the interface through top and cross-section view, respectively. In addition, the intensity of plate-like Ag3Sn IMC formation in the SnxAgCu solder bulk from 1 to 4%Ag was observed by SEM as well. The CSP BGA package with above combination was assembled to PC boards with OSP finish using Sn3Ag0.5Cu solder paste under 245degC peak temperature reflow. The test vehicle assembled was subject to mechanical drop test following JESD22-B111 to evaluate the solder joint integrity after zero and 150degC/250hrs thermal aging. The effect of interfacial IMC morphology evolution and Ag3Sn intensity in solder bulk by x (Ag percentage) and X (forth element addition) on the mechanical drop performance is concluded. Furthermore, one approaching in IMC microstructure control to overcome SnAgCu drop concern will be presented
研究了SnxAgCu和SnAgCuX CSP封装中焊点IMC组织对机械跌落性能的影响
随着2006年7月1日RoHS截止日期的临近,许多制造商正在积极消除消费电子产品中铅的使用。然而,无铅产品的开发需要最终产品制造商和部件制造商之间的密切合作,因为冶金、树脂材料、回流条件和防潮性将受到影响。回流温度的升高通常被认为是与转换为SnAgCu焊料互连相关的最困难的问题。但目前SnAgCu焊点的机械跌落性能已成为另一个有吸引力的话题,甚至由于SnAgCu互连的脆性特性而成为业界头痛的问题。本研究采用一个球径/节距为0.3 mm/0.5 mm的14 × 14无铅CSP BGA作为试验载体。在150℃热时效过程中,分别从顶部和横截面观察SnxAgCu和SnAgCuX焊料球与电解镀niau衬底结合产生的单层SnNi IMC和复合SnNi/SnNiCu IMC等金属间化合物的形貌演变。此外,SEM还观察了1 ~ 4%Ag的SnxAgCu钎料块中片状Ag3Sn IMC形成的强度。将上述组合的CSP BGA封装在245c峰值温度回流下,用Sn3Ag0.5Cu焊膏进行OSP光面组装到PC板上。装配好的试验车按照JESD22-B111进行机械跌落试验,评估焊点在零和150℃/250hrs热老化后的完整性。总结了x (Ag百分比)和x(第四元素添加量)对钎料块中界面IMC形貌演变和Ag3Sn强度的影响。此外,本文还提出了一种克服SnAgCu掉落问题的IMC微结构控制方法
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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