Jaume Roig, Y. Weber, J. Reynes, Frédéric Morancho, E. Stefanov, M. Dilhan, Gérard Sarrabayrouse
{"title":"Electrical and Physical Characterization of 150-200V FLYMOSFETs","authors":"Jaume Roig, Y. Weber, J. Reynes, Frédéric Morancho, E. Stefanov, M. Dilhan, Gérard Sarrabayrouse","doi":"10.1109/ISPSD.2006.1666131","DOIUrl":null,"url":null,"abstract":"A vertical n-channel 150V-200V FLYMOSFET is proposed in this work for the first time. Initially, spreading resistance profiling, scanning capacitance microscopy and process simulation are used to provide an accurate 1D and 2D device physical characterization. Concerning the electrical study, FLYMOSFET measurements show superior RonS-BVdss trade-off in comparison with the conventional power MOSFET and improved UIS ruggedness in front of the super junction MOSFET","PeriodicalId":198443,"journal":{"name":"2006 IEEE International Symposium on Power Semiconductor Devices and IC's","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Symposium on Power Semiconductor Devices and IC's","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2006.1666131","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
A vertical n-channel 150V-200V FLYMOSFET is proposed in this work for the first time. Initially, spreading resistance profiling, scanning capacitance microscopy and process simulation are used to provide an accurate 1D and 2D device physical characterization. Concerning the electrical study, FLYMOSFET measurements show superior RonS-BVdss trade-off in comparison with the conventional power MOSFET and improved UIS ruggedness in front of the super junction MOSFET