Electrical and Physical Characterization of 150-200V FLYMOSFETs

Jaume Roig, Y. Weber, J. Reynes, Frédéric Morancho, E. Stefanov, M. Dilhan, Gérard Sarrabayrouse
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引用次数: 4

Abstract

A vertical n-channel 150V-200V FLYMOSFET is proposed in this work for the first time. Initially, spreading resistance profiling, scanning capacitance microscopy and process simulation are used to provide an accurate 1D and 2D device physical characterization. Concerning the electrical study, FLYMOSFET measurements show superior RonS-BVdss trade-off in comparison with the conventional power MOSFET and improved UIS ruggedness in front of the super junction MOSFET
150-200V flymosfet的电学和物理特性
本文首次提出了一种垂直n沟道150V-200V的FLYMOSFET。最初,扩展电阻剖面,扫描电容显微镜和过程模拟用于提供准确的1D和2D器件物理表征。在电学研究方面,FLYMOSFET的测量结果显示,与传统功率MOSFET相比,它具有更好的RonS-BVdss折衷,并且在超级结MOSFET前面改进了usis坚固性
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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