Sputtering Technique to Fabricate Smooth Surface Oxide Film for Room Temperature Bonding

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598432

T. Saito, T. Hanasaki, T. Moriwaki, T. Goto, A. Takeda, A. Miura, M. Uomoto, T. Shimatsu

引用次数: 0

Abstract

200-nm-thick SiO2 films were deposited on Si wafers using a bias sputtering apparatus with dual cathodes controlled by a plasma-balanced-system (PLABAS). Surface roughness Sa of SiO2 deposited films was extremely small: 0.10 nm. Bonding using the smooth surface was demonstrated.

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制备表面光滑氧化膜的溅射技术

利用等离子体平衡系统(PLABAS)控制的双阴极偏压溅射装置在硅晶片上沉积了200 nm厚的SiO2薄膜。SiO2沉积膜的表面粗糙度Sa极小，仅为0.10 nm。用光滑的表面进行了粘接。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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