Voltage contrast edge placement estimation for overlay, CD, and local uniformity metrology (Conference Presentation)

C. Tabery, V. Rutigliani, Hastings Simon, Etienne de Poortere, Luke Wang, P. Leray, G. Schelcher, Yongjun Wang
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引用次数: 3

Abstract

Voltage contrast (VC) is a long known and well established technique to give combined inline sensitivity to electrically relevant measures of defectivity but also local defect isolation and integrated review SEM making the technique a critical piece of fab wafer inspection. By creation of a special mark design with many local repeats of different CD and overlay set points a voltage contrast response is created which allows the local edge placement error population to be estimated while also capturing a connectivity and isolation yield proxy. This enables high throughput local estimates of overlay, CD, overlay and CD process window and local CD uniformity. A test mask containing these marks was designed and fabricated at IMEC with metrology done on optical and electron beam inspection systems. Both open and short sensitivity are programmed into the marks and this yield proxy data has inherent value on its own. We propose to integrate these special test marks into some critical layers in modern memory and logic process flows with a design which can be added to scribe lines or empty regions/in die test structures in logic or empty regions of the memory periphery. Significant design and process knowledge is required to design a mark which can integrate with the process and give good EPE sensitivity. Initial mark designs have been targeted at single damascene copper on tungsten with VC inspection after copper polish. Initial results show a high baseline yield loss but also show clear and intuitive CD and Overlay process window quantification from the VC EPE marks. Marks as large as ~100,000 um2 and as small at 250um2 have been designed and enable overlay, CD, LCDU and with yield sensitivity to ~1 part per million for the larger marks and ~1% for the smallest marks. With the expected productivity of the ebeam inspection system we should be able thousands of marks per wafer or field to support diverse overlay, CD and control use models and process fingerprint mapping.
覆盖、CD和局部均匀度测量的电压对比度边缘放置估计(会议报告)
电压对比(VC)是一项久负盛名且成熟的技术,它可以对电气相关的缺陷测量提供综合的在线灵敏度,还可以对局部缺陷进行隔离和综合检查,使其成为晶圆厂晶圆检测的关键技术。通过创建具有许多不同CD和覆盖设定点的局部重复的特殊标记设计,创建电压对比响应,从而可以估计局部边缘放置误差总体,同时还可以捕获连通性和隔离率代理。这使得高吞吐量本地估计覆盖,CD,覆盖和CD进程窗口和本地CD均匀性。在IMEC设计和制造了包含这些标记的测试掩模,并在光学和电子束检测系统上进行了计量。开仓和短仓的敏感性都被写入了标记中,这种收益率代理数据本身就具有内在价值。我们建议将这些特殊的测试标记集成到现代存储器和逻辑处理流程中的一些关键层中,并设计可以添加到逻辑或存储器外围空区域的划线或空区域/模具测试结构中。设计一种能与工艺相结合并具有良好EPE灵敏度的标志需要大量的设计和工艺知识。最初的标记设计是针对钨上的单个大马士革铜,铜抛光后用VC检查。初步结果显示了高基线产量损失,但也显示了清晰直观的CD和Overlay过程窗口量化的VC EPE标记。设计的标记可大至~100,000 um2,小至250um2,可实现覆盖,CD, LCDU,对于较大的标记,产量灵敏度为~百万分之一,对于最小的标记,产量灵敏度为~1%。随着ebeam检测系统的预期生产力,我们应该能够在每个晶圆或现场进行数千个标记,以支持不同的覆盖,CD和控制使用模型以及过程指纹映射。
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