M. Yoshimaru, N. Inoue, M. Itoh, H. Kurogi, H. Tamura, N. Hirasita, F. Ichikawa, M. Ino
{"title":"High quality ultra thin Si/sub 3/N/sub 4/ film selectively deposited on poly-Si electrode by LPCVD with in situ HF vapor cleaning","authors":"M. Yoshimaru, N. Inoue, M. Itoh, H. Kurogi, H. Tamura, N. Hirasita, F. Ichikawa, M. Ino","doi":"10.1109/IEDM.1992.307358","DOIUrl":null,"url":null,"abstract":"Si/sub 3/N/sub 4/ film deposited by LPCVD with in situ HF vapor cleaning has been applied to dielectric film of stacked capacitor. The composition of the Si/sub 3/N/sub 4/ film deposited on poly-Si electrode becomes stoichiometric. The film shows low leakage current and high electrical reliability. But it brings a new problem. Si/sub 3/N/sub 4/ film deposited using in situ HF vapor cleaning shows selective deposition on poly-Si electrode. The edge of poly-Si electrode is not covered by Si/sub 3/N/sub 4/ film. This problem is avoidable by carpeting Si/sub 3/N/sub 4/ film under poly-Si electrode. This process realizes further improvement of stacked capacitor dielectric film reliability.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307358","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Si/sub 3/N/sub 4/ film deposited by LPCVD with in situ HF vapor cleaning has been applied to dielectric film of stacked capacitor. The composition of the Si/sub 3/N/sub 4/ film deposited on poly-Si electrode becomes stoichiometric. The film shows low leakage current and high electrical reliability. But it brings a new problem. Si/sub 3/N/sub 4/ film deposited using in situ HF vapor cleaning shows selective deposition on poly-Si electrode. The edge of poly-Si electrode is not covered by Si/sub 3/N/sub 4/ film. This problem is avoidable by carpeting Si/sub 3/N/sub 4/ film under poly-Si electrode. This process realizes further improvement of stacked capacitor dielectric film reliability.<>