Investigation of carrier streaming effect for the low spike fast IGBT turn-off

Abstract

This paper describes the investigation of the IGBT turn-off phenomena especially focused on the di/dt controlling in order to suppress the spike voltage. The design concepts for improvement of the trade-off relationship between the turn-off power dissipation and the spike voltage are represented. The new turn-off di/dt control method, the combination of the smaller gate resistance and controlling the collector injection efficiency, has been able to realize about 30% reduction in the turn-off energy compared to the conventional method, under the condition of the same spike voltage