Resurfed lateral bipolar transistors for high-voltage, high-frequency applications

Abstract

A high performance 40-V lateral bipolar transistor has been evaluated. The incorporation of the Resurf effect together with a gradually doped collector results in a significant suppression of the Kirk effect. As a result, a cut-off frequency of 7 GHz can be obtained with the resurfed device in comparison to 3.5 GHz for the conventional device with an identical breakdown voltage.