Characterization and Modeling of Zener Diode Breakdown Voltage Mismatch

Man Yang, C. McAndrew, Lei Chao, K. Xia
{"title":"Characterization and Modeling of Zener Diode Breakdown Voltage Mismatch","authors":"Man Yang, C. McAndrew, Lei Chao, K. Xia","doi":"10.1109/ICMTS.2019.8730968","DOIUrl":null,"url":null,"abstract":"In this paper, we present test structures and procedures to characterize and model mismatch of the breakdown voltage of Zener diodes. Direct force-current/measure-voltage for breakdown is not sufficiently accurate for mismatch characterization, so we use an $I(V)$ sweep followed by cubic interpolation; the accuracy of this approach is verified using the Tuinhout DUT-1-2-1-2 methodology. To demonstrate our approach, we present measured and modeled breakdown voltage mismatch for 5 V Zener diodes in a 90 nm power BCD process.","PeriodicalId":333915,"journal":{"name":"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2019.8730968","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

In this paper, we present test structures and procedures to characterize and model mismatch of the breakdown voltage of Zener diodes. Direct force-current/measure-voltage for breakdown is not sufficiently accurate for mismatch characterization, so we use an $I(V)$ sweep followed by cubic interpolation; the accuracy of this approach is verified using the Tuinhout DUT-1-2-1-2 methodology. To demonstrate our approach, we present measured and modeled breakdown voltage mismatch for 5 V Zener diodes in a 90 nm power BCD process.
齐纳二极管击穿电压失配的表征与建模
本文介绍了齐纳二极管击穿电压失配的测试结构和方法。击穿的直接力电流/测量电压不足以准确地进行失配表征,因此我们使用$I(V)$扫描,然后进行三次插值;使用Tuinhout dut - 1-2-3 -2方法验证了该方法的准确性。为了证明我们的方法,我们在90nm功率BCD工艺中对5 V齐纳二极管的击穿电压失配进行了测量和建模。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信