R. Berthelon, F. Andrieu, E. Josse, R. Bingert, O. Weber, E. Serret, A. Aurand, S. DelMedico, V. Farys, C. Bernicot, E. Béchet, É. Bernard, T. Poiroux, D. Rideau, P. Scheer, E. Baylac, P. Perreau, M. Jaud, J. Lacord, E. Petitprez, A. Pofelski, S. Ortolland, P. Sardin, D. Dutartre, A. Claverie, M. Vinet, J. Marin, M. Haond
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引用次数: 10
Abstract
We report on the main local layout effect in 14nm Ultra-Thin Buried oxide and Body Fully Depleted Silicon On Insulator (UTBB-FDSOI) CMOS technology [1]. This effect is demonstrated by Nano-Beam Diffraction to be directly induced by the strain in the SiGe channel and reproduced by an accurate electrical compact model. An original continuous-RX design optimizes the stress management, maintaining longitudinal stress component while relaxing the transverse one. A 28% ring oscillator delay improvement is experimentally demonstrated at same leakage for 1-finger inverter at VDD=0.8V supply voltage and a frequency gain up to 15% is simulated in a critical path of an A9 core.
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