Hard mold UV nanoimprint lithography process

Yinsheng Zhong, M. Yuen
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引用次数: 2

Abstract

Low temperature and low pressure nano-pattern fabrication process is presented. Hard mold UV nanoimprint lithography, processed by SUSS MicroTec MA6, was used for sub-100nm pattern fabrication. The process details including mold fabrication are provided. A comparison between patterns on soft mold and hard mold is given. The governing parameters in hard mold NIL process are identified. UV curable resin AMONIL MMS4 was used as a UV-curable photo resist (PR) in the process, while 4inch Si wafer was the imprinted substrate. Various resist coating thicknesses from 200nm to 500nm were tested. Imprint force was applied by the high pressure N2 gas, in order to get uniform force distribution over the whole imprint area. 88nm width line patterns were transferred successfully to the resin layer. Results evaluation was done by using AFM and SEM pictures. Image from optical microscope is also shown for reference.
硬模UV纳米压印工艺
介绍了低温低压纳米图案的制备工艺。采用SUSS MicroTec MA6加工的硬模UV纳米压印光刻技术,制备了亚100nm的图案。提供了包括模具制造在内的工艺细节。对软模和硬模的花纹进行了比较。确定了硬模零成形过程的控制参数。该工艺采用紫外光固化树脂AMONIL MMS4作为紫外光固化光刻胶(PR),以4英寸硅片为印迹基片。测试了200nm ~ 500nm的抗蚀剂涂层厚度。采用高压氮气施加压印力,使压印力在整个压印区域分布均匀。88nm宽的线条图案成功地转移到树脂层上。通过AFM和SEM图片对结果进行评价。并给出了光学显微镜图像,以供参考。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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