J. Browning, C. Chan, J. Ye, R. Macgregor, T. Ruden
{"title":"Measurement of end-hat effects in a crossed-field amplifier","authors":"J. Browning, C. Chan, J. Ye, R. Macgregor, T. Ruden","doi":"10.1109/IEDM.1992.307468","DOIUrl":null,"url":null,"abstract":"A linear format, low frequency (150 MHz), low power (10 to 100 W), crossed-field amplifier is operated with variable bias, electrostatic confining electrodes (end-hats). The end-hat bias is found to cause electron transport only in the vicinity of the end-hats. End-hat current measurements indicate a substantial part of the electron beam current (40%) can be collected when the end-hats are biased more positive than the floating potential. The observed change in gain versus end-hat bias can be accounted for by the lost beam current. Device gain versus sole bias measurements have been compared with numerical simulations and give general agreement.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307468","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A linear format, low frequency (150 MHz), low power (10 to 100 W), crossed-field amplifier is operated with variable bias, electrostatic confining electrodes (end-hats). The end-hat bias is found to cause electron transport only in the vicinity of the end-hats. End-hat current measurements indicate a substantial part of the electron beam current (40%) can be collected when the end-hats are biased more positive than the floating potential. The observed change in gain versus end-hat bias can be accounted for by the lost beam current. Device gain versus sole bias measurements have been compared with numerical simulations and give general agreement.<>