W. Van Den Daele, C. Le Royer, E. Augendre, G. Ghibaudo, S. Cristoloveanu
{"title":"Novel characterization of fully-depleted GeOI pMOSFET by magnetoresistance","authors":"W. Van Den Daele, C. Le Royer, E. Augendre, G. Ghibaudo, S. Cristoloveanu","doi":"10.1109/SOI.2010.5641398","DOIUrl":null,"url":null,"abstract":"Hole mobility in fully-depleted GeOI pMOSFETs is determined and analyzed using for the first time the geometric magnetoresistance technique. The temperature dependent measurements clarify the scattering mechanisms. A significant difference between effective mobility and magnetoresistance mobility is found. Unlike the SOI nMOSFET, this ratio (rMR ≃ 1.8) is rather independent on the temperature and inversion charge pointing out special scattering mechnisms.","PeriodicalId":227302,"journal":{"name":"2010 IEEE International SOI Conference (SOI)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International SOI Conference (SOI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2010.5641398","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Hole mobility in fully-depleted GeOI pMOSFETs is determined and analyzed using for the first time the geometric magnetoresistance technique. The temperature dependent measurements clarify the scattering mechanisms. A significant difference between effective mobility and magnetoresistance mobility is found. Unlike the SOI nMOSFET, this ratio (rMR ≃ 1.8) is rather independent on the temperature and inversion charge pointing out special scattering mechnisms.