Novel characterization of fully-depleted GeOI pMOSFET by magnetoresistance

W. Van Den Daele, C. Le Royer, E. Augendre, G. Ghibaudo, S. Cristoloveanu
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Abstract

Hole mobility in fully-depleted GeOI pMOSFETs is determined and analyzed using for the first time the geometric magnetoresistance technique. The temperature dependent measurements clarify the scattering mechanisms. A significant difference between effective mobility and magnetoresistance mobility is found. Unlike the SOI nMOSFET, this ratio (rMR ≃ 1.8) is rather independent on the temperature and inversion charge pointing out special scattering mechnisms.
用磁电阻表征全耗尽GeOI pMOSFET的新方法
利用几何磁阻技术首次测定和分析了完全耗尽的GeOI pmosfet中的空穴迁移率。温度相关的测量阐明了散射机制。有效迁移率与磁阻迁移率之间存在显著差异。与SOI nMOSFET不同,该比值(rMR≃1.8)与温度和反转电荷无关,具有特殊的散射机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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