Improvement of resistive switching memory parameters using IrOx Nanodots in high-κ AlOx Cross-Point

Abstract

The improvement in resistive switching memory parameters by embedding IrO_x nanodots in IrO_x/AlO_x/IrO_x NDs/AlO_x/W cross-point structure is reported. The fabricated memory devices exhibit MLC operation of both LRS and HRS, excellent read endurance of >;10⁶ times, program/erase endurance of >;10⁵ cycles, robust data retention of >;10⁴s at 125°C with a small operation voltage of ±2V and a low CC of <;200 μA.