Optimal voltage testing for physically-based faults

Y. Liao, D.M.H. Walker
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引用次数: 20

Abstract

In this paper we investigate optimal voltage testing approaches for physically-based faults in CMOS circuits. We describe the general nature of the problem and then focus an two fault types: resistive bridges between gate outputs that cause pattern sensitive functional faults and opens in transmission gates that cause delay faults. In both cases, the traditional stuck at model is inadequate. The test vector to sensitize and propagate a resistive bridging fault is not unique. The traditional greedy test vector selection is optimistic, with some choices having poor real coverage. We realistically model the fault and fault coverage, and describe an optimal selection strategy. In a transmission gate with an open NMOS or PMOS device, the output voltage is degraded, increasing delay and reducing noise margin. We model this fault and show how low-voltage testing can be used to detect it. Our goal in applying these techniques to all important fault types is to maximize the real coverage of voltage tests, thereby minimizing the number of relatively slow Iddq tests required to achieve high quality.
物理故障的最佳电压测试
本文研究了CMOS电路物理故障的最佳电压测试方法。我们描述了问题的一般性质,然后关注两种故障类型:导致模式敏感功能故障的门输出之间的电阻桥和导致延迟故障的传输门打开。在这两种情况下,传统的停滞模式都是不够的。敏化和传播阻性桥接故障的测试向量并不是唯一的。传统的贪婪测试向量选择是乐观的,有些选择具有较差的实际覆盖率。我们真实地建立了故障和故障覆盖的模型,并描述了一种最优选择策略。在具有开放的NMOS或PMOS器件的传输栅极中,输出电压会降低,从而增加延迟并降低噪声裕度。我们对这种故障进行了建模,并展示了如何使用低压测试来检测它。我们将这些技术应用于所有重要故障类型的目标是最大化电压测试的实际覆盖范围,从而最小化实现高质量所需的相对缓慢的Iddq测试的数量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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