Annealing characteristics of radiation induced leakage in SOS MOSFETs

Abstract

Recently, material procurement specifications for controlling and minimizing radiation induced leakage of integrated circuits in silicon-on-sapphire have been explored. It was demonstrated in some optimized SOS material fabrication conditions that a significant reduction in radiation induced leakage in SOS CMOS devices and circuits can be achieved at the price of somewhat reduced channel mobility and increased pre-radiation leakage levels. However, the understanding of reduction mechanisms in the radiation induced leakage is still lacking. In order to gain understanding of this phenomenon, the annealing behavior of the radiation induced leakage in SOS with new procurement specifications is investigated in this work. Based on the annealing results, a potential rad-hard method of low-temperature short-cycle annealing is proposed to cure radiation induced damage for further radiation hardening in space electronics applications.<>