A new method for the experimental determination of the control gate and drain coupling ratios in FLOTOX EEPROM cells

Abstract

A new method for the extraction of the control gate and drain coupling ratios in FLOTOX electrically erasable PROM (EEPROM) cells is proposed. The method enables parameter extraction to be performed directly on the memory cells, without any use of the so-called dummy-cell. The rapidity of the method allows statistical analysis of the coupling ratio variation to be performed throughout a wafer or a matrix. An alternative simplified method for extracting the drain coupling ratio in FLOTOX EEPROM cells, with optional use of the dummy-cell, is proposed.<>