Measuring of phosphorous in silicon wafers by VPD-ICPMS

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-01 DOI:10.1109/IPFA.2016.7564275

Hwee Hong Eng, Wei Teck Yeo, E. Er, S. Zhao

引用次数: 0

Abstract

Phosphorus is typically a common dopant used in wafer manufacturing. Measuring of phosphorous in Si-wafer is always demanding and matrix interferences is always a problem in VPD ICPMS. It is reported here the measuring of phosphorus in VPD matrix using ICPMS.

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用VPD-ICPMS测定硅片中的磷

磷是晶圆制造中常用的掺杂剂。硅晶片中磷的测量要求很高，而VPD ICPMS中基质干扰一直是一个问题。本文报道了用ICPMS测定VPD基质中磷的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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