Resistive vias defect localization methodology in failure analysis

Wu Chunlei, M. Motohiko, Winter Wang, G. Song, Wu Miao, T. Li, Yung-II Joe
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引用次数: 2

Abstract

Generally, it is very difficult to locating a resistive via defect in function failure analysis in CMOS circuit. This type defect could not be located directly by Photon emission microscopy analysis or other failure analysis techniques. In this paper, a useful method is introduced to show how to locate a resistive via defect. Some cases are presented in detail. And some valuable experiences are shared which could help us locate a resistive via defect quickly.
失效分析中的电阻通孔缺陷定位方法
在CMOS电路的功能失效分析中,通常很难通过缺陷来定位电阻。这种类型的缺陷不能通过光子发射显微镜分析或其他失效分析技术直接定位。本文介绍了一种定位电阻通孔缺陷的有效方法。并详细介绍了一些案例。分享了一些有价值的经验,可以帮助我们快速定位电阻通孔缺陷。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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