T. Benoist, C. Fenouillet-Béranger, P. Perreau, C. Buj, P. Galy, D. Marin-Cudraz, O. Faynot, S. Cristoloveanu, P. Gentil
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引用次数: 12
Abstract
The robustness against Electrostatic Discharge (ESD) events of gated diodes, fabricated in CMOS 45nm FDSOI technology, is compared for 10nm and 145nm Buried Oxide (BOX) thickness. It is shown that the performance of devices for co-design on thin BOX is improved thanks to a better thermal dissipation: A gain of 1.6 on the robustness was found.
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