FET arrays as CPI sensors for 3D stacking and packaging characterization

A. Ivankovic, V. Cherman, G. van der Plas, B. Vandevelde, G. Beyer, E. Beyne, I. De Wolf, D. Vandepitte
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引用次数: 17

Abstract

FET arrays are investigated from the viewpoint of Chip-Package Interaction (CPI) sensor suitability and presented as a possible solution for experimental characterization of CPI effects during 3D assembly steps: Stacking and packaging. The study presents a methodology consisting of an experimental approach with the support of FEM modeling. The use of the transistors as stress sensors covering in-plane stress components is justified, after which the applicability of the transistors to the actual stacking and packaging stress states is discussed. Calibration to in-plane stress of long and short channel transistors, p and n type, is performed to obtain sensor sensitivities and link stress to current shift by according calculated piezocoefficients. Testing the FET arrays as sensors is firstly done by means of a simple structure where a die is glued to a plastic substrate. The electrical measurements are compared to FEM models and profilometric scans. The sensors are next utilized to obtain first results from 3D stacking and packaging. The underfill - microbump mechanism in a 2-die stack is quantified and initial results on overmould impact are discussed.
FET阵列作为CPI传感器用于3D堆叠和封装表征
从芯片-封装相互作用(CPI)传感器适用性的角度研究了FET阵列,并提出了在3D组装步骤:堆叠和封装中CPI效应的实验表征的可能解决方案。本文提出了一种由实验方法和有限元模拟相结合的方法。将晶体管用作覆盖面内应力元件的应力传感器是合理的,然后讨论了晶体管对实际堆叠和封装应力状态的适用性。对p型和n型长沟道和短沟道晶体管的平面内应力进行校准,得到传感器灵敏度,并根据计算出的压电系数将应力与电流位移联系起来。测试FET阵列作为传感器首先是通过一个简单的结构,其中一个模具粘在塑料基板。电测量是比较有限元模型和轮廓扫描。传感器接下来被用来获得3D堆叠和包装的第一个结果。定量分析了双模堆中下填料-微凸点的机理,并讨论了上模冲击的初步结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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