Defect size distribution in VLSI chips

Abstract

VLSI patterns consisting of parallel lines of polysilicon with different spacings have been electrically tested. The number of observed shorts was found to be related to the line spacings by using an analytical model for the defect sensitive pattern areas. The distribution of defect sizes in the range from 0.5 to 1.4 mu m is proportional to x/sup -3/. The exponent value agrees with earlier distribution studies concerning defects several micrometers in size.<>