A novel high voltage Pch-MOS with a new drain drift structure for 1200V HVICs

Abstract

A new 1200V Pch-MOS having a new drain structure is proposed. Our proposing new 1200V Pch-MOS improves a substrate leak problem which occurred in conventional one without sacrificing a breakdown voltage and an output current. Thanks to the new Pch-MOS, a 1200V HVIC which provides a high voltage level-shifting from high voltage region to low voltage region is successfully realized.