Study on failure mode of solder bump fabricated using eutectic solder electroplating process

International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458) Pub Date : 2000-11-30 DOI:10.1109/EMAP.2000.904129

Guo-Wei Xiao, P. Chan, A. Teng, Jian Cai, M. Yuen

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引用次数: 2

Abstract

The electroplating-based flip chip process has many advantages over other solder bumping methods, where the bump fabrication process can affect the reliability of solder joints. In this paper, the effect of the UBM and electroplating process of the solder bump on the shear strength of the solder bump is studied, as well as the relationship between the shear test failure mode and solder bump fabrication process. It is reported that the Cu surface roughness is affected by the Cu plating current density and the appropriate current density is in a range from 10/spl sim/40 mA/cm/sup 2/. The solder bump plating process temperature should be within 30-35/spl deg/C. It is observed that the growth kinetics of intermetallic compound formation are affected by the Cu stud structure. The ratio of Cu/sub 3/Sn to the total Cu-Sn IMC layer thickness was from 0.5 to 0.15 with various Cu microstructures at 150/spl deg/C during thermal aging tests. The activation energy was in the range of 0.78 eV to 1.14 eV. Five shear test failure modes are analyzed which are related to the electroplating process.

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共晶焊料电镀工艺制作凸点失效模式的研究

基于电镀的倒装芯片工艺与其他凸点方法相比具有许多优点，凸点制造过程会影响焊点的可靠性。本文研究了凸点的UBM和电镀工艺对凸点抗剪强度的影响，以及剪切试验失效模式与凸点制作工艺的关系。镀层表面粗糙度受镀铜电流密度的影响，适宜的镀铜电流密度为10/spl sim/40 mA/cm/sup 2/。焊料凹凸镀工艺温度应在30-35/spl℃以内。结果表明，金属间化合物的生长动力学受到Cu螺柱结构的影响。在150/spl℃温度下，Cu/sub 3/Sn与Cu-Sn IMC总厚度之比在0.5 ~ 0.15之间。活化能在0.78 ~ 1.14 eV之间。分析了与电镀工艺有关的五种剪切试验破坏模式。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)

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