Negative bias temperature instability “multi-mode” compact model based on threshold voltage and mobility degradation

Abstract

In this paper we have developed a model to obtain drain current (ID) degradation at all transistor operating modes (linear, saturation and sub-threshold) during NBTI stress based on threshold voltage (VT) and mobility (µ) degradation. This model provides a compact way to comprehend NBTI induced drain current degradation for transistors subject to multiple operating modes (e.g., dynamic voltage scaling, active/standby modes).