Pulsed plasma CVD of fluorocarbon thin films [low-k ILDs]

Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247) Pub Date : 1999-05-24 DOI:10.1109/IITC.1999.787077

C. Labelle, K. Lau, K. Gleason

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Abstract

Pulsed PECVD has been used to deposit a range of fluorocarbon films utilizing three different precursors: hexafluoropropylene oxide (HFPO), 1,1,2,2-tetrafluoroethane (C/sub 2/H/sub 2/F/sub 4/), and difluoromethane (CH/sub 2/F/sub 2/). C-1s XPS shows that films from HFPO are dominated by CF/sub 2/ groups, films from CH/sub 2/F/sub 2/ are dominated by C-CF groups, and films from C/sub 2/H/sub 2/F/sub 4/ have significant concentrations of both groups. Gas-phase FTIR has been used to identify the species in each pulsed plasma effluent and the pulsed plasma chemistry has been inferred from them. Large differences in gas-phase effluent species have been found between the three precursors, and a correlation can be drawn between the dominant reactions in a pulsed plasma and the resulting films. Finally, /sup 19/F and /sup 13/C nuclear magnetic resonance (NMR) spectroscopy has been used to further define the various film structures, and these more detailed structural analyses have been used to correlate specific structural configurations to thermal stability.

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碳氟薄膜的脉冲等离子体CVD[低k ILDs]

脉冲PECVD已用于沉积使用三种不同前体的一系列氟碳薄膜:六氟环氧丙烷(HFPO)、1,1,2,2-四氟乙烷(C/sub 2/H/sub 2/F/sub 4/)和二氟甲烷(CH/sub 2/F/sub 2/)。C-1s XPS显示HFPO膜以CF/sub - 2/基团为主，CH/sub - 2/F/sub - 2/膜以C-CF基团为主，C/sub - 2/H/sub - 2/F/sub - 4/膜两组浓度均显著。气相傅里叶红外光谱已用于识别脉冲等离子体流出物中的物质，并由此推断出脉冲等离子体的化学性质。在三种前驱体之间发现了气相流出物种类的巨大差异，并且可以在脉冲等离子体中的主要反应与所得薄膜之间得出相关性。最后，使用/sup 19/F和/sup 13/C核磁共振(NMR)光谱进一步定义了各种膜的结构，这些更详细的结构分析已用于将特定的结构构型与热稳定性联系起来。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247)

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