A model for double snapback phenomena in N channel SOI MOSFETs

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344566

J.S.T. Huang

引用次数: 2

Abstract

In the double snapback phenomenon exhibited by a N channel MOSFET, the device is observed to switch from the first to the second snapback states. The first snapback can be attributed to either an MOS or bipolar feedback mechanism. This paper proposes a physical model that is able to provide explanations for the observed dependance of second snapback on the gate voltage and the channel length.<>

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N沟道SOI mosfet双回吸现象模型

在N沟道MOSFET表现出的双snapback现象中，可以观察到器件从第一snapback状态切换到第二snapback状态。第一次快速反馈可以归因于MOS或双极反馈机制。本文提出了一个物理模型，该模型能够解释所观察到的二次回调对栅极电压和通道长度的依赖性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of 1993 IEEE International SOI Conference

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