Semiconductor layer transfer by anodic wafer bonding

Abstract

High quality and low cost single crystalline semiconductor on glass (SOG) wafers are highly desirable, e.g., for flat panel displays and solar cells (Si on glass), sensors (Ge on glass) and GaN growth (SiC on glass). SOG wafers can be realized by hydrogen implanted Si wafer bonding and layer splitting ("Smart Cut") which saves the Si substrate and is an environmentally friendly technique. However, almost no information on the process design has been revealed. In this work we discuss the design guidelines for SOG preparation using anodic bonding and the layer splitting approach.