A methodology for pre-determination of bipolar SPICE model parameters in BiCMOS technology

Abstract

In order to minimize measurement efforts, a methodology is proposed for obtaining SPICE (simulation program with IC emphasis) model parameters for bipolar devices of varying sizes available in a BiCMOS technology. The methodology is based on the partitioning of terminal currents and capacitances into area- and perimeter-dependent unit parameters. Model parameters are provided for all devices in a manner consistent with controllable accuracy indicators. This approach allows pre-determination of the model parameters for the devices which are yet to be fabricated.<>