Test structure and analysis for accurate RF-characterization of tungsten through silicon via (TSV) grounding devices

Abstract

We present an analysis on the extraction of the through silicon via (TSV) inductance from single port and two port S-parameter results. The test structure design is shown to significantly impact the extracted value and could cause inaccurate results and subsequently errors in the Spice model if not accounted for. We will show that an analytical model of the return circuit loop that the TSV forms with the test structure, does provide a useful assessment of the accuracy of the measured results. This analysis further provides important input for test structure design and when to use single port or two port test structures for TSV measurement.