Low Active Power High Speed Cache Design

A. Islam, M. Kafeel, A. Imran, M. Hasan
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Abstract

The active power is one of the major contributors to the total power consumption in the SRAM cell. It consists mainly of two components -- write power and read power. These power dissipations occur due to charging/discharging of large bit line capacitance. On-chip cache size has become increasingly important for high performance applications, and it now presents more of a limit to microprocessor speed than clock rate. The models and methodologies for the design of SRAM, an integral component of microprocessor cache, have changed with time. Presently, continued scaling is threatened by variability in SRAM performance and function. This work addresses the emerging threat of variability keeping active power consumption and speed of operation in consideration.
低有功功率高速缓存设计
有功功率是SRAM单元总功耗的主要贡献者之一。它主要由两个部分组成——写能力和读能力。这些功率损耗是由于大位线电容的充电/放电造成的。片上高速缓存的大小对于高性能应用变得越来越重要,它现在对微处理器速度的限制比时钟速率的限制更多。SRAM是微处理器缓存的重要组成部分,其设计模型和方法随着时间的推移而发生变化。目前,SRAM性能和功能的变化威胁着持续扩展。这项工作解决了在考虑有功功耗和运行速度时出现的可变性威胁。
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