Palladium coated copper wire wedge integrity to withstand extended high temperature storage stress test

L. Chia, Tan Kim Guan, C. Lam, Mak Chee Hoe, Gwee Hoon Yen
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引用次数: 2

Abstract

Copper (Cu) wire bonding technology had been widely accepted as a interconnect material in semiconductor packaging. The main advantage of Cu as a interconnect material is cost, thermal and electrical performance as compare to gold. However effect of corrosive elements on bare Cu wire remain a big challenge for the reliability of Cu wire packages. Market trend is pushing for Palladium coated copper (PCC) wire to be the alternative for bare Cu wire, due to the better bondability process and resistance to corrosive elements. Nevertheless there are many researches suggest PCC wire is not suitable for High Temperature Storage (HTS) reliability stress test more than 150oC due to the intrinsic degradation of PCC wire. From literature review the main contribution to the degration of PCC wire was due to the crack or void on the Palladium (Pd) coating. Cu underneath the Pd coating will diffuse through the crack to the surface and weaken the integrity of the wire. Through sparking parameter optimization, optimal Pd coverage on the FAB can be achieved hence first bond integrity can be secured. On the other hand, 100% Pd coverage on the second bond wedge is impossible to obtain due to the extensive mechanical contact of capillary on the wedge during formation. In this paper, the study will focus on the wedge PCC wire on roughen leadframe with NiPdAuAg surface finishing. The study will cover difference 3 main factors influencing the integrity of wedge, i) wedge formation, ii) leadframe AuAg plating thickness iii) ionic elements from mold compound. Sample with various wedge formation on different AuAg plating thickness with and without mold compound will be subjected to HTS 200oC up to 900 hours and comparison of the degration rate for different samples can be identify. The aim of the study is to identify the dominant factor of the PCC wedge degration on HTS stress so that improvement for package beyond AEC Q100 Grade 0 can be achieved.
镀钯铜线楔形完整性,承受延长的高温储存应力测试
铜线键合技术作为半导体封装中的一种互连材料已被广泛接受。与金相比,铜作为互连材料的主要优势在于成本、热学和电学性能。然而,腐蚀元素对裸铜线的影响仍然是铜线封装可靠性的一大挑战。市场趋势是推动钯包覆铜线(PCC)作为裸铜线的替代品,由于更好的粘合性工艺和耐腐蚀性元素。然而,许多研究表明,由于PCC线的固有劣化,PCC线不适合在150℃以上的高温储存(HTS)可靠性应力试验中使用。从文献综述来看,导致PCC线材降解的主要原因是钯(Pd)涂层上的裂纹或空洞。钯涂层下的铜会通过裂纹扩散到表面,从而削弱线材的完整性。通过优化火花参数,可以达到最佳的Pd覆盖FAB,从而保证第一键的完整性。另一方面,由于在地层过程中楔上毛细管的广泛机械接触,在第二键楔上不可能获得100%的Pd覆盖。在本文中,研究将重点放在楔形PCC线在粗糙引线框架与nipdaag表面处理。该研究将涵盖影响楔板完整性的3个主要因素:1)楔板的形状;2)引线框架镀银厚度;3)模具化合物中的离子元素。在不同的镀银厚度上形成不同楔形的样品,在加和不加模具化合物的情况下,在高温下加热200℃至900小时,比较不同样品的降解率。本研究的目的是确定PCC楔块对高温高压应力退化的主导因素,以便实现AEC Q100 0级以上包装的改进。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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