A 512×576 65-nm CMOS ISFET sensor for food safety screening with 123.8 mV/pH sensitivity and 0.01 pH resolution

Yu Jiang, X. Liu, Tran Chien Dang, Mei Yan, Hao Yu, Jui-Cheng Huang, Cheng-Hsiang Hsieh, Tung-Tsun Chen
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引用次数: 10

Abstract

Internet-of-things (IoTs) need a common CMOS technology platform to build multi-modal sensor on chip. This paper shows a CMOS-based ion-sensitive field effect transistor (ISFET) pH sensor for food safety screening. A low-power high-gain subthreshold trans-impedance amplifier is integrated with an integration capacitor to form a readout scheme by pH-to-time-to-voltage conversion (pH-TVC), which greatly improves sensitivity of a single ISFET pixel. Fabricated in standard CMOS 65-nm process with the smallest pixel pitch of 4.4 μm, a 123.8 mV/pH sensitivity is achieved compared to traditional source-follower readout with a 6.3 mV/pH sensitivity. E. coli experiment further shows its great potential to monitor hygiene condition for food safety with a 0.01 pH resolution.
用于食品安全筛选的512×576 65纳米CMOS ISFET传感器,灵敏度为123.8 mV/pH, pH分辨率为0.01
物联网需要一个通用的CMOS技术平台来构建芯片上的多模态传感器。介绍了一种用于食品安全筛选的基于cmos的离子敏感场效应晶体管(ISFET) pH传感器。将低功率高增益亚阈值反阻抗放大器与集成电容集成,通过ph -时间-电压转换(pH-TVC)形成读出方案,大大提高了ISFET单个像素的灵敏度。采用标准的CMOS 65纳米工艺制作,最小像素间距为4.4 μm,与传统的6.3 mV/pH灵敏度相比,灵敏度为123.8 mV/pH。大肠杆菌实验进一步显示了其在0.01 pH分辨率下监测食品安全卫生状况的巨大潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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