A novel Multi - Nitridation ONO interpoly dielectric (MN-ONO) for highly reliable and high performance NAND Flash memory

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI:10.1109/VTSA.2009.5159280

C. H. Liu, Y. M. Lin, Y. Sakamoto, R. Yang, D. Yin, P. Chiang, H. Wei, C. Ho, S. H. Chen, H. Hwang, C. Hung, S. Pittikoun, S. Aritome

引用次数: 3

Abstract

Multi-Nitridation ONO has been demonstrated for the first time. Significant improvement are obtained in NAND Flash performance and reliability. (1) 1V program voltage reduction owing to 10A EOT (equivalant oxide thickness ) reduction (2) More than 20% tighter cell Vt distribution width can be achieved from ONO bird's beak free due to supressing encroachment of gate re-oxidation by Floating Gate (FG) / top oxide nitridation. And also, (3) good data retention can be realized by applying plasma oxidation on bottom oxide to suppress the trap assisted charge loss. MN-ONO is a promising technology for high density NAND Flash beyond 40nm generation.

查看原文本刊更多论文

一种用于高可靠性和高性能NAND闪存的新型多氮化ONO插补电介质(MN-ONO)

首次证实了多氮化ONO。NAND闪存的性能和可靠性得到了显著提高。(1)由于10A EOT(等效氧化物厚度)的降低，程序电压降低了1V。(2)由于浮栅(FG) /顶部氧化物氮化抑制栅极再氧化的侵蚀，从ONO鸟喙处可以实现栅极Vt分布宽度收紧20%以上。(3)通过对底层氧化物施加等离子体氧化来抑制陷阱辅助电荷损失，可以实现良好的数据保留。MN-ONO是一种很有前途的40nm以上高密度NAND闪存技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2009 International Symposium on VLSI Technology, Systems, and Applications

自引率

0.00%

发文量