Laser produced plasma EUV sources for HVM 7nm node lithography: progress in availability and prospects of power scaling

I. Fomenkov
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引用次数: 4

Abstract

In this paper, we provide an overview of state-of-the-art technologies for laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source performance to enable high volume manufacturing of the N7 node and beyond. Source architecture enabling stable and reliable performance at 250 Watts EUV power, and the technical challenges for scaling of key source parameters and subsystems toward 500W will be described. Improvements in availability of droplet generation and the performance of critical subsystems that contribute to Collector lifetime toward the one tera-pulse level, will be shown. Finally, we will describe current research activities and provide a perspective for LPP EUV sources towards the future ASML Scanners.
用于HVM 7nm节点光刻的激光等离子体EUV光源:可用性进展和功率缩放前景
在本文中,我们概述了激光产生等离子体(LPP)极紫外(EUV)源性能的最新技术,以实现N7节点及以后的大批量生产。将描述在250瓦EUV功率下实现稳定可靠性能的源架构,以及将关键源参数和子系统扩展到500W的技术挑战。将展示液滴生成可用性的改进和关键子系统的性能,这些子系统有助于收集器的寿命达到1万亿脉冲水平。最后,我们将描述当前的研究活动,并提供LPP EUV源对未来ASML扫描仪的展望。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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