S. Yoshikawa, F. Toujou, Y. Homma, H. Takenaka, S. Hayashi, M. Inoue, K. Goto, R. Shimizu
{"title":"Evaluation of BN-delta-doped multilayer reference materials for shallow depth profiling in SIMS","authors":"S. Yoshikawa, F. Toujou, Y. Homma, H. Takenaka, S. Hayashi, M. Inoue, K. Goto, R. Shimizu","doi":"10.1109/IWJT.2002.1225199","DOIUrl":null,"url":null,"abstract":"We are developing multilayer reference materials for shallow depth profiling in secondary ion mass spectrometry (SIMS). In this report, the potential of boron-nitride (BN)/silicon (Si) multilayers as the reference materials for shallow depth profiling is shown from the standpoint of SIMS analyses.","PeriodicalId":300554,"journal":{"name":"Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2002.1225199","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
We are developing multilayer reference materials for shallow depth profiling in secondary ion mass spectrometry (SIMS). In this report, the potential of boron-nitride (BN)/silicon (Si) multilayers as the reference materials for shallow depth profiling is shown from the standpoint of SIMS analyses.