Progress in wide bandgap semiconductor SiC for power devices

Abstract

The progress in SiC crystal growth of bulk and epitaxial layers for power devices is reviewed. Current status in device processes is introduced. Then, the state-of-the-art SiC power devices are described. "On-resistance" in vertical power MOSFETs which determines the power loss is discussed, and recent progress in SiC MOSFET performance is presented by improving channel mobilities.