Surface activation process of lead-free solder bumps for low temperature bonding

Yinghui Wang, K. Nishida, M. Hutter, M. Howlader, E. Higurashi, T. Suga, T. Kimura
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引用次数: 5

Abstract

Focused on the problems of the lead-free alloys bonding at high melting temperature, high density, low cost and low temperature lead-free flip chip bonding process was developed by the surface activated bonding (SAB) method. Sn-3.0Ag-0.5Cu (wt %) alloy, with better reliability and solderability than other alternatives for electronic packaging, were chose for the experiments to be bonded with typical electrodes, SnAg, Cu and Au film. The feasibility of Sn-3.0Ag-0.5Cu SAB bonding at room temperature was confirmed. The bonding strength in vacuum and N/sub 2/ was high. In air, it was found that the bonding strength was highly depended on exposure time. Combined with low temperature (150/spl deg/C), SAB bonding process was developed in air by using 30 /spl mu/m pitch Au/Sn flip chip samples for the first time. Resistance and tensile test showed good electrical and mechanical properties of the bonded Au/Sn samples. Bonding interfaces were observed by scanning electron microscope (SEM) and electron probe microanalyzer (EPMA).
低温焊用无铅焊点的表面活化工艺
针对无铅合金在高熔点、高密度、低成本和低温条件下的焊接问题,采用表面活化键合(SAB)方法开发了无铅倒装芯片的焊接工艺。选择Sn-3.0Ag-0.5Cu (wt %)合金作为实验材料,与典型电极、SnAg、Cu、Au薄膜进行键合,其可靠性和可焊性均优于其他电子封装材料。验证了Sn-3.0Ag-0.5Cu SAB在室温下键合的可行性。在真空和N/sub 2/下的结合强度较高。在空气中,发现粘接强度高度依赖于暴露时间。结合低温(150/spl℃),首次利用30 /spl mu/m间距的Au/Sn倒装芯片样品,在空气中建立了SAB键合工艺。电阻和拉伸试验表明,结合的Au/Sn样品具有良好的电学和力学性能。采用扫描电镜(SEM)和电子探针微量分析仪(EPMA)对键合界面进行了观察。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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