The Development of an Innovative Process of Large Grained and Low Resistivity Cu Wires for less than hp 45nm ULSI

Abstract

We have developed an innovative process to create large grained and low resistivity Cu wires for less than hp 45 nm ULSIs. The resistivity of the 50 nm wide Cu wires by an innovative high purity process is found to be 21% lower than those created by the conventional process. It was also found that Cu wires formed with the new high purity process have larger grains with a smaller spread and a lower impurity concentration than those made with the conventional process. This innovative new process is expected to be a powerful candidate for created Cu wire of less than hp 45 nm ULSIs.