Design and evaluation of SOI devices for radiation environments

Abstract

SOI technologies offer key advantages for use in radiation environments, primarily related to reduced susceptibility to single-event effects. Because of charge trapping in the BOX, however, SOI technologies with light body doping (such as some fully depleted technologies) may be more sensitive to TID than similar bulk technologies. For sub 100-nm technologies, the advantages of SOI technologies related to SEE are less clear than they were in previous earlier technology generations because the critical charge required to upset the circuits is so low. The probability for upset (cross section), however, is lower for SOI circuits because charge collection does not occur over long distances, as it does in bulk technologies. This also reduces the likelihood that a single particle will affect multiple circuits in an IC.