Double Gate NCFET : A New Approach for Low Subthreshold Swing

Abstract

NCFETs(Negative Capacitance Field Effect Transistors) are commonly known for their Low Power Consumption[4]. As the name itself suggests that it uses a Negative Capacitance For the Voltage Amplification. This Amplification is due to the polarisation in the ferroelectric material, which is used as Negative Capacitance[5]. Due to the Orderly Alignment of the Dipoles in Ferroelectric material when an voltage is applied there will be an enhanced electric field which inturn enhances the voltage. So that there is an voltage amplification. This paper explores an approach to design NCFETS with a lower subthreshold swing and aslo details about the voltage amplification. This model is verified with several other model for an thin body, double-gate FET architecture.