CFD Simulation of Two-Phase Immersion Cooling Using FC-72 Dielectric Fluid

Amirreza Niazmand, Tushar Chauhan, S. Saini, Pardeep Shahi, Pratik V. Bansode, D. Agonafer
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引用次数: 5

Abstract

With more development in electronics system capable of having larger functional densities, power density is increasing. Immersion cooling demonstrates the highest power usage efficiency (PUE) among all cooling techniques for data centers and there is still interest in optimizing immersion cooling to use it to its full potential. The aim of this paper is to present the effect of inclination and thermal shadowing on two-phase immersion cooling using FC-72. For simulation of boiling, the RPI (Rensselaer Polytechnic Institute) wall boiling model has been used. Also, two empirical models were used for calculation of bubble departure diameter and nucleate site density. The boundary condition was assumed to be constant heat flux and the bath temperature was kept at boiling temperature of FC-72 and the container pressure is assumed to be atmospheric. this study showed that due to the thermal shadowing, boiling boundary layer can lay over the top chipset and increases vapor volume fraction over top chipsets. This ultimately causes increase in maximum temperature of second chip. The other main observation is with higher inclination angle of chip, maximum temperature on the chip decreases up to 3°C.
FC-72介质两相浸没冷却的CFD模拟
随着具有更大功能密度的电子系统的发展,功率密度也在不断提高。在所有数据中心冷却技术中,浸入式冷却显示出最高的功率使用效率(PUE),并且仍然有兴趣优化浸入式冷却以充分发挥其潜力。本文的目的是研究倾斜和热遮蔽对FC-72两相浸没冷却的影响。为了模拟沸腾过程,采用了伦斯勒理工学院(Rensselaer Polytechnic Institute)的壁面沸腾模型。同时,用两个经验模型计算了气泡偏离直径和核位密度。边界条件为恒热流密度,浴槽温度为FC-72沸点,容器压力为常压。研究表明,由于热阴影的存在,沸腾边界层可以覆盖在晶片顶部,增加晶片顶部的蒸汽体积分数。这最终导致第二芯片的最高温度升高。另一个主要观察结果是,随着芯片倾角的增加,芯片上的最高温度降低了3℃。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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