Copper electromigration failure times evaluated over a wide range of voiding phases

Yunlong Li, K. Croes, T. Kirimura, Y. Siew, Z. Tokei
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引用次数: 6

Abstract

Electromigration failure times of 100 nm wide dual damascene Cu interconnects have been evaluated over a very wide range of different stages of void formation and growth. Voids that did not span the whole line width and height have been monitored using the so-called local sense structures, while standard single via structures were used to study fully grown voids. The activation energy Ea did not change over the whole experimental range of failure times indicating that the main diffusion path during void formation and growth does not change in our semi-bamboo lines. The earlier reported increase in distributional spread σ after full void formation is less pronounced during void formation which is due to different kinetics before and after full void formation. The use of defining failure criteria before full void formation has been explored as a tool to reduce electromigration test times. Due to the constant Ea, test times can be reduced by over a factor of two.
铜电迁移失效时间评估在大范围的空化相
100 nm宽双damascene铜互连的电迁移失效时间已经在很大范围内的不同阶段的空洞形成和成长进行了评估。没有跨越整条线宽度和高度的空洞使用所谓的局部感觉结构进行监测,而标准的单孔结构用于研究完全发育的空洞。在失效时间的整个实验范围内,活化能Ea没有发生变化,这表明在我们的半竹线中,孔隙形成和生长的主要扩散路径没有发生变化。前期报道的孔洞形成后分布扩散σ的增加在孔洞形成过程中并不明显,这是由于孔洞形成前后动力学的不同。研究人员探索了在形成全孔隙之前定义失效标准的方法,以减少电迁移测试时间。由于恒定的Ea,测试时间可以减少两倍以上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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