Channel Profile Control Based On Transient-enhanced-diffusion Suppression By RTA For 0.18 /spl mu/m Single Gate CMOS

Abstract

Significant effects of rapid thermal annealing treatment, which was inserted before the gate oxidation, on MOSFETs characteristics have been studied in detail. The reduction of the threshold voltage and the enhancement of the transconductance were achieved for NMOSFETs, whereas a shallow and high channel doping profile was obtained for PMOSFETs. These results, which are promising for constructing high-performance single gate CMOS devices, were interpreted in terms of the suppression of transient diffusion such as B outside diffusion and B segregation into thc gatc oxide, which were enhanced by residual damage induced by high energy ion implantation.