{"title":"Disturbance fault testing on various NAND flash memories","authors":"Chih-Sheng Hou, Jin-Fu Li","doi":"10.1109/ETS.2012.6233030","DOIUrl":null,"url":null,"abstract":"Summary form only given. Due to the specific mechanism of functional operations, flash memories are prone to disturbance faults. Furthermore, different NAND flash memories might have some differences on the array organizations and the supported functional operations. In this paper, therefore, test algorithms for covering the disturbance faults in various types of NAND flash memories are developed.","PeriodicalId":429839,"journal":{"name":"2012 17th IEEE European Test Symposium (ETS)","volume":"146 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 17th IEEE European Test Symposium (ETS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ETS.2012.6233030","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Summary form only given. Due to the specific mechanism of functional operations, flash memories are prone to disturbance faults. Furthermore, different NAND flash memories might have some differences on the array organizations and the supported functional operations. In this paper, therefore, test algorithms for covering the disturbance faults in various types of NAND flash memories are developed.