Formation of Ni(Pt) Germanosilicide Using a Sacrificial Si Cap Layer

Abstract

Ni(Pt) alloy has been implemented in the SiGe silicidation process for 65nm node CMOS device fabrication. A thin Si cap layer was introduced into the in-situ doped Si1-xGexB film stack to further enhance the thermal stability of the silicide film. The Ni(Pt) germanosilicide temperature transition curves have been studied, N-/P-FET mismatch issues have been resolved, and a robust integration flow has been developed for the 65 nm node CMOS device fabrication.