Total Dose Testing of the ISL70061SEH and ISL70062SEH PMOS and NMOS Load Switches

Abstract

We report the results of total ionizing dose testing carried out by Renesas Electronics America on the ISL70061SEH (PMOS) and ISL70062SEH (NMOS) load switches. These parts are single channel, low voltage, high current load switches intended for use in space power switching applications. The tests were carried out as a part of baseline total dose hardness characterization carried out during part development. The test also performed biased high temperature anneals after the completion of irradiation at both dose rates to evaluate time dependent effects. Both parts are implemented in a 0.6 micron bulk BiCMOS process.