Efficient power Schottky rectifiers of 4H-SiC

Abstract

Efficient high-voltage 4H-SiC Schottky rectifiers were fabricated. These devices showed very low specific on-resistances (1.0-2.0/spl times/10/sup -3/ /spl Omega/ cm/sup 2/) with high breakdown voltages of /spl sim/800 V. Selecting an optimum barrier hight, 4H-SiC Schottky rectifiers operated with low forward voltage drops and low reverse leakage currents, which lead to a reduction of power losses. Utilizing Ti (/spl phi//sub B/:1.0/spl sim/1.2 V) as a Schottky metal, an efficient 4H-SiC power Schottky rectifiers with low losses could be realized.