New Locos Trench Oxide IGBT Enables 25% Higher Current Density in 4.5kV/1500A Module

Abstract

In this paper we present first results of a 4.5kV/1500A IGBT module using new LOCOS (Local Oxidation of Silicon) Trench Oxide IGBTs (LTO-IGBT). It is shown that this new module with increased current density compared to the previous DMOS generation, also show very robust dynamic and competitive performance at $\mathbf{T}_{\mathbf{J}}=150^{0}\mathbf{C}$.