Digital Design Techniques for Dependable High Performance Computing

S. Azimi, L. Sterpone
{"title":"Digital Design Techniques for Dependable High Performance Computing","authors":"S. Azimi, L. Sterpone","doi":"10.1109/ITC44778.2020.9325281","DOIUrl":null,"url":null,"abstract":"As today’s process technologies continuously scale down, circuits become increasingly more vulnerable to radiation-induced soft errors in nanoscale VLSI technologies. The reduction of node capacitance and supply voltages coupled with increasingly denser chips are raising soft error rates and making them an important design issue. This research work is focused on the development of design techniques for high-reliability modern VLSI technologies, focusing mainly on Radiation-induced Single Event Transient. In this work, we evaluate the complete life-cycle of the SET pulse from the generation to the mitigation. A new simulation tool, Rad-Ray, has been developed to simulate and model the passage of heavy ion into the silicon matter of modern Integrated Circuit and predict the transient voltage pulse taking into account the physical description of the design. An analysis and mitigation tool has been developed to evaluate the propagation of the predicted SET pulses within the circuit and apply a selective mitigation technique to the sensitive nodes of the circuit. The analysis and mitigation tools have been applied to many industrial projects as well as the EUCLID space mission project, including more than ten modules. The obtained results demonstrated the effectiveness of the proposed tools.","PeriodicalId":251504,"journal":{"name":"2020 IEEE International Test Conference (ITC)","volume":"237 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Test Conference (ITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ITC44778.2020.9325281","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

Abstract

As today’s process technologies continuously scale down, circuits become increasingly more vulnerable to radiation-induced soft errors in nanoscale VLSI technologies. The reduction of node capacitance and supply voltages coupled with increasingly denser chips are raising soft error rates and making them an important design issue. This research work is focused on the development of design techniques for high-reliability modern VLSI technologies, focusing mainly on Radiation-induced Single Event Transient. In this work, we evaluate the complete life-cycle of the SET pulse from the generation to the mitigation. A new simulation tool, Rad-Ray, has been developed to simulate and model the passage of heavy ion into the silicon matter of modern Integrated Circuit and predict the transient voltage pulse taking into account the physical description of the design. An analysis and mitigation tool has been developed to evaluate the propagation of the predicted SET pulses within the circuit and apply a selective mitigation technique to the sensitive nodes of the circuit. The analysis and mitigation tools have been applied to many industrial projects as well as the EUCLID space mission project, including more than ten modules. The obtained results demonstrated the effectiveness of the proposed tools.
可靠高性能计算的数字设计技术
随着当今工艺技术的不断缩小,电路越来越容易受到纳米级超大规模集成电路技术中辐射引起的软误差的影响。节点电容和电源电压的减小,加上芯片密度的增加,使得软错误率上升,成为一个重要的设计问题。本研究工作的重点是发展高可靠性现代VLSI技术的设计技术,主要集中在辐射诱导的单事件瞬态。在这项工作中,我们评估了SET脉冲从产生到缓解的整个生命周期。本文开发了一种新的模拟工具Rad-Ray,用于模拟和模拟现代集成电路中重离子进入硅物质的过程,并在考虑设计物理描述的情况下预测瞬态电压脉冲。开发了一种分析和缓解工具,用于评估预测的SET脉冲在电路中的传播,并对电路的敏感节点应用选择性缓解技术。分析和缓解工具已应用于许多工业项目以及EUCLID空间任务项目,包括10多个模块。得到的结果证明了所提出的工具的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信