Spectral resolution of photon emission from SiGe:C heterojunction bipolar transistors (HBTs)

Abstract

This publication presents photon emission measurements of SiGe:C-HBTs acquired with Si-CCD and InGaAs detector, proving the InGaAs-camera capability for this application. The emission characteristic helps distinguish operating modes like saturation, active or avalanche. Spectral response shows a local maximum at 1300 nm, representing the decreased bandgap due to additional germanium.